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Ion Beam Etching Equipment - List of Manufacturers, Suppliers, Companies and Products

Ion Beam Etching Equipment Product List

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[Demo in Progress!] Small Experimental Ion Beam Etching Device

[Demo in Progress!] Small Experimental Ion Beam Etching Device

[Demo in progress!] Experimental device equipped with an ion source that can be customized to meet usage needs.

The "Small Experimental Ion Beam Etching Device" uses a DC ion source and is equipped with a substrate rotation cooling single stage. It easily etches materials such as Au, Pt, and magnetic materials, and taper processing can also be done easily. Processing is possible at a substrate surface temperature of 80°C or lower. It is ideal for microfabrication. 【Features】 ● No toxic gases are used, so exhaust gas treatment is unnecessary ● Endpoint detector can be installed ● For inquiries or questions about ion beam etching devices, ion sources, and ion beam technology, please feel free to consult us. For more details, please download the catalog or contact us.

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Small Ion Beam Etching Device

Small Ion Beam Etching Device

This is an ion beam etching device that uses an ion source to irradiate the target material with an ion beam and perform dry etching.

The small ion beam etching device uses a DC ion source and is an ion beam etching (IBE) device equipped with a substrate rotation cooling single stage. It is capable of etching fine patterns, as well as metal and magnetic materials. 【Features】 ○ Easily etches Au, Pt, magnetic materials, etc. ○ Taper processing is easy ○ Processing is possible at substrate surface temperatures below 80°C ○ No toxic gases are used, so exhaust gas treatment is unnecessary ○ Can be equipped with an endpoint detector For more details, please contact us or download the catalog.

  • Etching Equipment

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Ferroelectric Ion Beam Etching Solution 'QuaZar'

Ferroelectric Ion Beam Etching Solution 'QuaZar'

Inert gas Ar etching and enhanced RIBE using reactive gases are possible!

"QuaZar" is an etching processing technology that enables vertical etching capability, which is difficult to achieve with plasma etching, in the etching process of hard-to-etch materials such as ferroelectric PZT, thanks to its large-area ion source and advanced motion control. By adopting a unique Ion Source, Marathon Grids, and optional Dual PBN, it triples the MTBM compared to conventional products (and can also be installed in existing equipment from other companies). Additionally, the REDEP Breaker and AUXILIARY Electrode prevent RF shunting and anode disappearance. 【Features】 ■ In PZT etching applications, etch stop is possible with noble metal electrode layers without EPD (with no deposition on sidewalls and a smooth surface). ■ The selectivity of photoresist in PZT etching improves from 0.6:1 with inert IBE to 1.1:1 with RIBE. ■ The etching speed for PZT improves from about 20 nm/min with inert IBE to about 30 nm/min with RIBE. *For more details, please feel free to contact us.

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